The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

In this study, the effect of deposition temperature TiN thin films deposited using thermal atomic layer (ALD) method was investigated. TiCl4 precursor and NH3 reactive gas were used, rate, resistivity change, surface morphology characteristics compared in range 400 °C–600 °C. While decreased to 177 µΩcm as increased 600 °C, an increase roughness (Rq) 0.69 nm a deterioration step coverage identified. order obtain high-quality film with excellent even at low temperatures, post-treated plasma combination N2/He ratio 3:2 confirm change resistivity. X-ray diffraction analysis confirmed crystallization caused by energy. As result, °C be lowered about 25%.